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Patent Searching and Data


Title:
SEMICONDUCTOR IC CONTACT STRUCTURE
Document Type and Number:
Japanese Patent JP2002131376
Kind Code:
A
Abstract:

To provide a semiconductor IC contact structure suitable for testing a high frequency characteristic because of its signal path shorter than that in a conventional one, manufacturable at a low cost, capable of always keeping a good contact condition with a solder ball, and sufficiently applicable to a fine-pitch solder ball.

In this structure electrically connecting the solder ball 2 serving as a connection electrode of the semiconductor IC 1 to a land pattern 4 formed on an inspection circuit base board 3, contacts 5 each formed of a ring spring are arranged in correspondence to the respective solder balls 2. The ring spring is formed of wires sequentially connected to each other while bypassing a plurality of parts on the land pattern 4 so that the bypassing parts are raised slantingly from the land pattern 4. The solder balls 2 are forcibly pressed to the contacts 5.


Inventors:
MIZUTA MASAHARU
Application Number:
JP2000322180A
Publication Date:
May 09, 2002
Filing Date:
October 23, 2000
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01R1/073; H01R33/76; G01R31/26; (IPC1-7): G01R31/26; G01R1/073; H01R33/76
Attorney, Agent or Firm:
Keigo Murakami (3 outside)