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Patent Searching and Data


Title:
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
Document Type and Number:
Japanese Patent JPH01171239
Kind Code:
A
Abstract:
PURPOSE:To enhance dielectric strength with simple construction, by arranging a cell having an output circuit whose output and input terminals are opened, and an input circuit whose input and output terminals are opened and connecting the opened input and output terminals with each other by means of functions of a terminal circuit. CONSTITUTION:A terminal circuit cell consists of a bonding pad 101 connected to an external circuit, an output circuit 105 outputting signals externally and an input circuit 106 receiving signals inputted from the outside. Interconnections are provided in the terminal circuit cell according to the terminal functions thereof. When a high voltage is applied to the bonding pad, a current path is created between the bonding pad and a power supply or the ground. Since an output transistor is has very large driving ability and a drain area and, hence, a diode area are large, large current caused by application of a high voltage can be absorbed efficiently and electrostatic breakdown can be prevented effectively.

Inventors:
TANIGUCHI TAKASHI
Application Number:
JP33076687A
Publication Date:
July 06, 1989
Filing Date:
December 25, 1987
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L23/52; H01L21/3205; H01L21/82; H01L21/822; H01L27/04; (IPC1-7): H01L21/82; H01L21/88; H01L27/04
Attorney, Agent or Firm:
Toshio Nakao (1 outside)