To reduce power consumption in an unnecessary area and obtain high performance corresponding to use when obtaining a reconfigurable circuit of which the function can be flexibly changed in a micro process.

The semiconductor integrated circuit is comprised of a reconfigurable circuit 107 provided with a high-threshold voltage transistor area 108 and a low threshold voltage transistor area 109, a circuit development control part 105 that controls which transistor area allows a circuit to be obtained, a power voltage control part 106 to apply a power voltage only to the used transistor area, and a memory 100 to accumulate circuit information. When a high-performance circuit is obtained, the circuit is developed in the low threshold voltage transistor area 109 and the supply of power to the high threshold voltage transistor area 108 is stopped, and conversely, when a low-leak circuit is obtained, the circuit is developed in the high threshold voltage transistor area 108 and the supply of power to the low threshold voltage transistor area 109 is stopped.