PURPOSE: To miniaturize a semiconductor laser device, by a structure wherein a semiconductor element to heat a semiconductor laser element is formed between the semiconductor laser element and a cooling bottom on which the laser element is to be mounted so that the semiconductor element is integrated with the semiconductor laser element.
CONSTITUTION: A voltage is applied across electrodes 19 and 17 for driving semiconductor laser element, with the electrode 19 being positive while the electrode 17 being negative, to operate a semiconductor laser element 18 while a voltage is applied across a second P-N junction actuating electrode 16A and an electrode 17 to operate a semiconductor element 14. Thereby, the semiconductor element 14 is heated so that the heat produced in the element 14 is transferred to the laser element 18. On the other hand, when a voltage is applied across a first P-N junction actuating electrode 15A and a first electrode 13 to actuate a first P-N junction 15, with the obtained current-voltage characteristic in the current value being 10μA, the forward voltages at liquid nitrogen temperature and room temperature are 0.9V and 0.3V, respectively. Therefore, if the applied voltage across a second P-N junction 16 is controlled based on the voltage information in the first P-N junction 15 at the current value of 10μA, the semiconductor element 14 can be maintained at the predetermined heating temperature. Accordingly, the oscillation wavelength of the semiconductor laser element 18 can be controlled at the predetermined value.
EBE KOJI
SHINOHARA KOJI
