Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP3792003
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce the operating voltage of a semiconductor light-emitting element.
SOLUTION: An n-type GaN layer 13 which has a step part in the upper part is formed on a substrate 11 composed of sapphire whose plane direction is (0001). A multiple quantum well layer 16 which contains an active layer 16a, a p-type clad layer 18 which is composed of p-type Al0.1Ga0.9N, a contact layer 20 which is composed of p-type GaN0.95P0.05 and an anode electrode 22 formed in such a way that a first metal film 22a whose cross section is nearly T-shaped, whose leg part is surrounded by a current constriction layer 21 composed of silicon oxide and which is composed of Ni and a second metal film 22b composed of Au on the first metal film 22a are laminated are formed on the upper step side of the step part on the n-type GaN layer 13.
Inventors:
Nobuyuki Uemura
Yoshiaki Hasegawa
Akihiko Ishibashi
Yoshihiro Hara
Isao Kidoguchi
Masahiro Kume
Yoshiaki Hasegawa
Akihiko Ishibashi
Yoshihiro Hara
Isao Kidoguchi
Masahiro Kume
Application Number:
JP10911497A
Publication Date:
June 28, 2006
Filing Date:
April 25, 1997
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
H01S5/323; H01L33/06; H01L33/32; H01L33/40; H01S5/00; H01S5/042; H01S5/343; (IPC1-7): H01S3/18; H01L33/00
Domestic Patent References:
| JP8222764A | ||||
| JP8316581A | ||||
| JP8213653A | ||||
| JP8213651A | ||||
| JP10093194A | ||||
| JP9129926A |
Attorney, Agent or Firm:
Hiroshi Maeda
Hiroshi Koyama
Ichiro Oneda
Hiroshi Koyama
Ichiro Oneda
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