Title:
SEMICONDUCTOR SENSOR
Document Type and Number:
Japanese Patent JPH03295431
Kind Code:
A
Abstract:
PURPOSE:To enable high-resolution detection over a wide detection range by inputting the output of a field effect transistor(FET) to plural amplifying circuits which differ in amplification gain by the semiconductor sensor, and obtaining plural detection outputs. CONSTITUTION:When the FET 2 is stressed, the drain current ID of the FET 2 varies and this variation is applied to a current-voltage converting circuit 3 to generate a voltage output 3e, which is sent to 1st and 2nd amplifying circuits 4 and 5. The circuit 5 is set in voltage gain lower than the circuit 4. The output 4b of the circuit 4 is supplied by a switch circuit 9 to a selection output terminal 6c in a range wherein the stress applied to the FET 2 is weak. When the stress is large, the output 7a of a comparator 7 which monitors the output level of the circuit 5 goes up to an H level and the circuit 9 is switched to a dotted-line side through a timer circuit 8 to supply the output 5b of the circuit 5 to the terminal 6c. Consequently, a high-resolution detection output is obtained over a wide range from a fine input to a large input.
Inventors:
TAKEBE KATSUHIKO
Application Number:
JP9838390A
Publication Date:
December 26, 1991
Filing Date:
April 13, 1990
Export Citation:
Assignee:
HONDA MOTOR CO LTD
International Classes:
G01L1/18; G01D3/024; G01D3/028; G01L1/00; G01L9/00; G01L9/04; G01P15/09; G01P15/10; G01P15/12; (IPC1-7): G01L1/18; G01L9/04; G01P15/09; G01P15/10
Domestic Patent References:
| JPS5354990A | 1978-05-18 | |||
| JPS532069A | 1978-01-10 | |||
| JPS59133425A | 1984-07-31 |
Attorney, Agent or Firm:
Yoichiro Shimoda (2 outside)