To provide a semiconductor storage device capable of preventing a Vt fluctuation due to UV beam generated in a manufacturing step of the semiconductor storage device with high reliability, and a manufacturing method of the same.
An interlayer insulating film 106 is formed on a memory cell 100 constituted of a bit line 102 composed of a diffusion layer formed on a semiconductor substrate 101, a gate insulation film having a trapping performance formed between bit lines 102, and a word line 104 formed on the gate insulation film, and a bit line contact plug 109 connected to the bit line 102 is formed in this interlayer insulating film 106. Then, a light shielding film 105 is formed in at least a region covering the memory cell 100 on the interlayer insulating film 106, and a part of this light shielding film 105 is formed so as to further extend into a film from the surface of the interlayer insulating film 106, in the vicinity of the bit line contact plug 109.
| WO/2008/120384 | SEMICONDUCTOR DEVICE, AND ITS MANUFACTURING METHOD |
| JP4564272 | Semiconductor devices and their manufacturing methods |
| JP2011222775 | SEMICONDUCTOR MEMORY DEVICE |
TAKAHASHI KEITA
YOSHIDA KOJI
TAKAHASHI NOBUYOSHI
KURIHARA KIYOSHI
MORIYAMA YOSHINARI
| JP2003243545A | 2003-08-29 | |||
| JPS596581A | 1984-01-13 |
| WO2004079824A2 | 2004-09-16 |
Hiroshi Takeuchi
Takahisa Shimada
Yuji Takeuchi
Katsumi Imae
Atsushi Fujita
Kazunari Ninomiya
Tomoo Harada
Iseki Katsumori
Seki Kei
Yasuya Sugiura
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