SEMICONDUCTOR STORAGE DEVICE - TOSHIBA MEMORY CORP

Title:

SEMICONDUCTOR STORAGE DEVICE

Document Type and Number:

Japanese Patent JP2018157069

Kind Code:

A

Abstract:

PROBLEM TO BE SOLVED: To provide a semiconductor storage device with less voltage drop in a semiconductor layer.SOLUTION: A semiconductor storage device according to one embodiment comprises a plurality of control gate electrodes, a semiconductor layer, and a gate insulating layer. The plurality of control gate electrodes are arranged in a first direction crossing an upper surface of a substrate. The first semiconductor layer extends in a first direction, and is opposed to lateral faces in a second direction crossing the first direction, of the plurality of control gate electrodes. The gate insulating layer is provided between the control gate electrodes and the first semiconductor layer. In addition, the first semiconductor layer has a first portion having a first plane orientation, and a second portion having a second plane orientation different from the first plane orientation.SELECTED DRAWING: Figure 6

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Inventors:

MIYAGAWA HIDENORI
TAKAISHI RIICHIRO
NUMATA TOSHINORI

Application Number:

JP2017052821A

Publication Date:

October 04, 2018

Filing Date:

March 17, 2017

Export Citation:

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Assignee:

TOSHIBA MEMORY CORP

International Classes:

H01L27/11582; H01L21/336; H01L27/10; H01L27/11519; H01L27/11524; H01L27/11556; H01L27/11565; H01L27/1157; H01L29/788; H01L29/792

Attorney, Agent or Firm:

Kisaragi International Patent Business Corporation

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