Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JP2020035930
Kind Code:
A
Abstract:
To provide a semiconductor storage device that can be appropriately controlled.SOLUTION: A semiconductor storage device according to one embodiment comprises: a substrate; a plurality of first gate electrodes; a first semiconductor film opposed to the plurality of first gate electrodes; and a first gate insulating film provided between the plurality of first gate electrodes and the first semiconductor film. In addition, the semiconductor storage device comprises: a plurality of second gate electrodes farther from the substrate than the plurality of first gate electrodes; a second semiconductor film opposed to the plurality of second gate electrodes; and a second gate insulating film provided between the plurality of second gate electrodes and the second semiconductor film. Further, the semiconductor storage device comprises: a third gate electrode provided between the plurality of first gate electrodes and the plurality of second gate electrodes; a third semiconductor film opposed to the third gate electrode; and a third gate insulating film provided between the third gate electrode and the third semiconductor film. Furthermore, a width of the third semiconductor film in a second direction is larger than that of one end of the second semiconductor film and smaller than that of the other end of the first semiconductor film.SELECTED DRAWING: Figure 4
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Inventors:
KASASHIMA SHUNSUKE
Application Number:
JP2018162051A
Publication Date:
March 05, 2020
Filing Date:
August 30, 2018
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H01L27/11582; H01L21/336; H01L27/11521; H01L27/11556; H01L27/11568; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Kisaragi International Patent Business Corporation