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Patent Searching and Data


Title:
SEMICONDUCTOR STORAGE DEVICE
Document Type and Number:
Japanese Patent JPH0482262
Kind Code:
A
Abstract:

PURPOSE: To ensure a sufficient capacitor capacity even when an element is made fine by a method wherein the surface on the side of an insulating film in a part formed in a contact hole of the lower-part electrode of a capacitor is formed to be a deep recessed shape.

CONSTITUTION: At a lower-part electrode 16 constituting a capacitor, the surface shape of a part formed in a contact hole 14 is formed to be a deep recessed shape. The surface shape can be formed easily by using a sputtering method. Thereby, the surface area of the capacitor lower-part electrode can be increased by the same plane area as compared with a capacitor lower-part electrode in which the contact hole 14 has been filled. Consequently, even when an element is made fine, it is possible to ensure a sufficient capacitor capacity which is required from a viewpoint of reliability.


Inventors:
KATAYAMA TOSHIHARU
Application Number:
JP19597090A
Publication Date:
March 16, 1992
Filing Date:
July 24, 1990
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L27/04; H01L21/822; H01L21/8242; H01L27/10; H01L27/108; (IPC1-7): H01L27/04; H01L27/108
Attorney, Agent or Firm:
Fukami Hisaro (2 outside)