Title:
SEMICONDUCTOR STRAIN SENSOR AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP3124485
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor strain sensor constituted in such a manner that the deflection quantity of a cantilever composed of a semiconductor substrate may be detected as a change in the diode characteristic in a p-n junction part by forming the p-n junction in the deflecting part of the cantilever.
SOLUTION: The cantilever 10 is composed of a U-shaped cantilever arm part 10a and a supporting part 10b and the front end 10c of the U-shaped cantilever arm part 10a is provided with a probe (not shown in Fig.) for AFM. The cantilever 10 is composed of the N type substrate 31 and a P- diffused region 32 is formed on the inner side of its U-shaped part. The p-n junction 50 is formed at the boundary between this P- diffused region 32 and the N type substrate 31. An N+ contact region 21 is formed within the N type substrate region in the supporting part 10b and a P+ contact region 22 is formed within the P- diffused region 32.
Inventors:
Hiroshi Takahashi
Yoshiharu Shirakawa
Nobuhiro Shimizu
Yoshiharu Shirakawa
Nobuhiro Shimizu
Application Number:
JP9712096A
Publication Date:
January 15, 2001
Filing Date:
April 18, 1996
Export Citation:
Assignee:
Seiko Instruments Inc.
International Classes:
G01B7/16; G01B7/34; G01B21/30; G01N37/00; G01Q20/04; G01Q60/38; H01J37/28; H01L29/84; (IPC1-7): G01B7/16; G01B21/30; G01N37/00; H01J37/28; H01L29/84
Domestic Patent References:
| JP862230A | ||||
| JP7240395A | ||||
| JP4741785B1 |
Attorney, Agent or Firm:
Keinosuke Hayashi
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