PURPOSE: To provide a semiconductor thin film forming device which can selectively produce SiH3 radicals, can form a high-quality amorphous Si film, and can realize a stable film forming rate by constituting the device of a first reaction chamber for producing hydrogen radicals and a second reaction chamber for causing a reaction between a gaseous starting material and the hydrogen radicals.
CONSTITUTION: A semiconductor thin film forming device is constituted of a hydrogen gas introducing means 1, first reaction chamber 2 provided with means 9 and 10 which decompose an introduced hydrogen gas and produce hydrogen radicals, and a second reaction chamber 4 provided with a means which introduces the hydrogen radicals, a gaseous starting material introducing means 7, and a means which causes a reaction between the gaseous starting material and hydrogen radicals. For example, the hydrogen radicals are produced by heating the hydrogen gas by passing the gas through a nozzle 1 equipped with a heater and introducing the gas into the first reaction chamber 2 equipped with RF electrodes 10 and the produced hydrogen radicals are introduced into the second reaction chamber together with undecomposed hydrogen molecules. On the other hand, a silane gas 8 which is the gaseous starting material is introduced into the chamber 4 through the nozzle 7 after the gas 8 is heated with a heater 6.
| JPH07310185 | CVD GAS FEEDER |
IIDA YOSHINORI
FURUKAWA AKIHIKO
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