Title:
SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2006120896
Kind Code:
A
Abstract:
To provide a semiconductor wafer or the like capable of reducing a difference between high frequency characteristics of a semiconductor device after a previous process and high frequency characteristics of the semiconductor device after a later process, and of maintaining reliability of electric characteristics or the like of a finished product.
The semiconductor wafer includes an element formation region 50 defined by a scribed line region 60. An element useable as a TEG and a pad 8 for TEG are formed in the element formation region 50.
Inventors:
IWAMATSU TOSHIAKI
IPPOSHI TAKASHI
IPPOSHI TAKASHI
Application Number:
JP2004307879A
Publication Date:
May 11, 2006
Filing Date:
October 22, 2004
Export Citation:
Assignee:
RENESAS TECH CORP
International Classes:
H01L21/822; H01L21/66; H01L27/04; H01L29/786
Attorney, Agent or Firm:
Shigeaki Yoshida
Yoshitake Hidetoshi
Takahiro Arita
Yoshitake Hidetoshi
Takahiro Arita
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