Title:
SILICON CARBIDE ELEMENT AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2006120897
Kind Code:
A
Abstract:
To restrain the deterioration of element characteristics caused due to basal plane dislocation, existing in the semiconductor substrate, in a semiconductor element.
The semiconductor element comprises the semiconductor substrate 11, a semiconductor layer 20 formed on the surface of the semiconductor substrate 11, a gate insulating film 16 formed on the semiconductor layer 20, and a gate electrode 19 insulated from the semiconductor layer 20 via the gate insulating film 16. Density of the basal plane dislocation is ≥104 cm-2 in the semiconductor substrate 11, and the density of the basal plane dislocation is ≤103 cm-2 at a portion on the surface of the semiconductor layer 20 facing the gate electrode 19.
Inventors:
TAKAHASHI KUNIMASA
KITAHATA MAKOTO
KUSUMOTO OSAMU
UCHIDA MASAO
YAMASHITA MASAYA
MIYANAGA RYOKO
HASHIMOTO KOICHI
KITAHATA MAKOTO
KUSUMOTO OSAMU
UCHIDA MASAO
YAMASHITA MASAYA
MIYANAGA RYOKO
HASHIMOTO KOICHI
Application Number:
JP2004307883A
Publication Date:
May 11, 2006
Filing Date:
October 22, 2004
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L21/336; H01L21/205; H01L29/12; H01L29/78
Attorney, Agent or Firm:
Seiji Okuda
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