Title:
SILICON CARBIDE-CONTAINING MONOLITHIC REFRACTORY
Document Type and Number:
Japanese Patent JP2003246682
Kind Code:
A
Abstract:
To provide silicon carbide-containing monolithic refractory having excellent corrosion resistance and spalling resistance and free from occurrence of crack or peeling for a long period of time by improving oxidation resistance of a silicon carbide raw material contained in the monolithic refractory.
The silicon carbide-containing monolithic refractory contains the silicon carbide raw material in which the content of metal iron is <0.5 mass% to 100 mass% total silicon carbide raw material.
Inventors:
YAMAZAKI TATSUO
Application Number:
JP2002046649A
Publication Date:
September 02, 2003
Filing Date:
February 22, 2002
Export Citation:
Assignee:
TAIKO REFRACTORIES
International Classes:
C04B35/66; C21B7/14; F27D1/00; (IPC1-7): C04B35/66; F27D1/00
Attorney, Agent or Firm:
Takaishi Tachibana
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