To provide a reaction sintering method for producing a compact silicon carbide heating element excellent in durability, in which resistivity is easily adjusted.

This heating element is produced by mixing α-SiC powder having 20-200 μm average particle diameter and ≤0.05 wt.% nitrogen content with carbon powder having ≤15 μm particle diameter, by the pressure forming of the mixed powder, by sintering the formed product having 85-95% relative density to the theoretical forming density in nitrogen gas atmosphere at 2,000-2,200°C in an intervened state of metallic silicon and by heat-treating the sintered product in nitrogen gas atmosphere at ≥2,300°C. The adjustment and control of the resistivity is carried out by changing the mixing ratio of α-SiC powder to carbon powder.