SILICON-CARBIDE SEMICONDUCTOR DEVICE

Title:

SILICON-CARBIDE SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2014011342

Kind Code:

A

Abstract:

To suppress creeping discharge and to suppress property deterioration, durability deterioration and reliability deterioration of a semiconductor element due to dicing.

While forming an insulator film 3 to an end portion of a chip constituting an SiC semiconductor device, a groove part 3b surrounding a cell region is formed in a portion covered with a passivation film 6 in the insulator film 3. Thus, even when a crack occurs by cutting the insulator film 3 during dicing, the crack is intercepted by the groove part 3b so as not to be propagated inside more. Therefore, even in a structure where creeping discharge can be suppressed by forming the insulator film 3 to a chip end portion so as not to reveal an SiC surface, characteristics of a semiconductor element can be prevented from being deteriorated.

Inventors:

AKIBA ATSUYA
MIZUNO SHOJI
KONISHI MASAKI
WATANABE YUKIHIKO

Application Number:

JP2012147457A

Publication Date:

January 20, 2014

Filing Date:

June 29, 2012

Export Citation:

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Assignee:

DENSO CORP
TOYOTA MOTOR CORP

International Classes:

H01L29/47; H01L21/28; H01L21/768; H01L23/532; H01L29/872

Domestic Patent References:

JP2009231321A	2009-10-08
JP2005260059A	2005-09-22
JP2011014605A	2011-01-20
JP2013191632A	2013-09-26

Foreign References:

WO2008126268A1

2008-10-23

Attorney, Agent or Firm:

Patent Business Corporation Yuai Patent Office

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