Title:
SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP3631976
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a silicon carbide single crystal without through hole such as micro pipe.
SOLUTION: The silicon carbide single crystal is obtained by growing a silicon carbide single crystal on a silicon carbide seed crystal, wherein a liquid compound containing silicon, a liquid compound containing carbon, and a sodium compound are mixed homogeneously, dried, crushed, and carbonized for preparing a raw material. The raw material thus obtained is fed to the surface of silicon carbide seed crystal which is kept and heated in an inert gas atmosphere. A silicon dioxide in the raw material is softened on the surface of silicon carbide seed crystal, and the flowable liquid silicon dioxide is brought into close contact with the silicon carbide seed crystal. The silicon carbide single crystal is grown on the surface of the silicon carbide seed crystal by reducing the liquid silicon dioxide by carbon.
Inventors:
Masuzou Yamada
Application Number:
JP2001134822A
Publication Date:
March 23, 2005
Filing Date:
May 02, 2001
Export Citation:
Assignee:
Masuzou Yamada
International Classes:
C30B29/36; (IPC1-7): C30B29/36
Domestic Patent References:
| JP2000256091A |
Attorney, Agent or Firm:
▲吉▼川 俊雄
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