Title:
SILICON CARBIDE SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2015233058
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a silicon carbide substrate manufacturing method and a semiconductor device manufacturing method, which can improve manufacturing efficiencies of a silicon carbide substrate and a semiconductor device.SOLUTION: A silicon carbide substrate manufacturing method comprises: a process of preparing a material substrate 1 composed of a silicon carbide; a process of performing an oxidation treatment or a carbonization treatment on the material substrate 1 to form a sacrificial layer 12 in a region of the material substrate 1 including a principal surface 1A; and performing chemical mechanical polishing on the principal surface 1A of the material substrate 1 where the sacrificial layer 12 is formed.
Inventors:
HONKE TSUBASA
OKITA KYOKO
OKITA KYOKO
Application Number:
JP2014118771A
Publication Date:
December 24, 2015
Filing Date:
June 09, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES
International Classes:
H01L21/304; B24B1/00; H01L21/28; H01L21/329; H01L29/47; H01L29/872
Attorney, Agent or Firm:
Shuhei Kitano
Katsuya Tanaka
Katsuya Tanaka
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