SILICON NITRIDE-BASED SINTERED COMPACT

Title:

SILICON NITRIDE-BASED SINTERED COMPACT

Document Type and Number:

Japanese Patent JP3207044

Kind Code:

B2

Abstract:

PURPOSE: To produce a silicon nitride-based sintered compact excellent in creep resistance and having high strength in the temp. range from room temp. to a high temp. and to impart high reliability in the case of application to automotive parts or parts for a gas engine used at a high temp.
CONSTITUTION: This silicon nitride-based sintered compact excellent in creep resistance contains ≥70mol% silicon nitride, 1-10mol% (expressed in terms of oxides) group IIIa elements of the Periodic Table and 1-20mol% (expressed in terms of SiO2) impurity-like oxygen. The group IIIa elements include Lu as a base and the amt. of group IIIa elements other than Lu is ≤7mol% of the amt. of all the group IIIa elements. The molar ratio of the amt. (expressed in terms of SiO2) of the oxygen to the amt. (expressed in terms of oxides) of all the group IIIa elements is <2.

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Inventors:

Hirokazu Tanaka
Takehiro Oda
Izumitaro Yamamoto
Tomohiro Iwaida

Application Number:

JP11840794A

Publication Date:

September 10, 2001

Filing Date:

May 31, 1994

Export Citation:

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Assignee:

Kyocera Corporation

International Classes:

C04B35/584; (IPC1-7): C04B35/584

Domestic Patent References:

JP63100067A
JP46160A
JP6271357A
JP848565A
JP7330435A

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