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Patent Searching and Data


Title:
SILICON NITRIDE SINTERED COMPACT AND ITS PRODUCTION
Document Type and Number:
Japanese Patent JP2000211974
Kind Code:
A
Abstract:

To provide a silicon nitride sintered compact especially excellent in corrosion resistance in hot acid and alkaline solutions, having high strength and capable of easily be compacted, and to provide a method for producing the same compact.

This silicon nitride sintered compact contains 0.1-2 wt.% magnesium in terms of MgO, 0.1-2 wt.% aluminum in terms of Al2O3, 0.5-2 wt.% tantalum in terms of Ta2O5 and 1-5 wt.% zirconium in terms of ZrO2. The total content of Mg, Al and Ta is preferably ≤4 wt.% in terms of their oxides. The sintered compact is easily produced at a low cost by the gas power burning of silicon nitride powder with a preferred sintering additive powder in a nitrogen atmosphere especially at 10-100 kg/cm2 pressure. In addition, burning in a reducing atmosphere leads to the formation of a sintered compact containing TaC as tantalum, which has the high value of commodity suppressed in uneven coloring.


Inventors:
MITSUOKA TAKESHI
SEKIGUCHI YUTAKA
URASHIMA KAZUHIRO
IIO SATOSHI
Application Number:
JP1335999A
Publication Date:
August 02, 2000
Filing Date:
January 21, 1999
Export Citation:
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Assignee:
NGK SPARK PLUG CO
International Classes:
C04B35/584; (IPC1-7): C04B35/584
Attorney, Agent or Firm:
Kojima Kiyoji