Title:
SIMOX SUBSTRATE
Document Type and Number:
Japanese Patent JP2002289819
Kind Code:
A
Abstract:
To provide a SIMOX substrate where leak defect density of an embedded oxide film is small and characteristic is superior in the range of wider surface silicon layer thickness.
In the SIMOX substrate, the embedded oxide layer and a surface single-crystal silicon layer are formed by subjecting it to high temperature heat treatment after oxygen ions are implanted in a silicon single crystal substrate. It is a silicon single-crystal substrate, having a main surface approximate to a (001) face. When an angle between a normal of the main surface of the substrate and the [001] orientation is θ, the main surface of the substrate is inclined from the (001) face, in the range 0°≤θ≤0.5°.
More Like This:
| JPS6469027 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
| JPH0321055 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND MANUFACTURE OF THE SAME |
| JPH02156663 | BIPOLAR IC |
Inventors:
SASAKI TSUTOMU
MATSUMURA ATSUKI
MATSUMURA ATSUKI
Application Number:
JP2001084853A
Publication Date:
October 04, 2002
Filing Date:
March 23, 2001
Export Citation:
Assignee:
NIPPON STEEL CORP
International Classes:
H01L21/76; H01L21/02; H01L21/265; H01L27/12; (IPC1-7): H01L27/12; H01L21/265; H01L21/76
Domestic Patent References:
| JPS6467937A | 1989-03-14 | |||
| JPH1148238A | 1999-02-23 | |||
| JPH1174234A | 1999-03-16 | |||
| JPH08102448A | 1996-04-16 | |||
| JPH07106512A | 1995-04-21 | |||
| JPH09283442A | 1997-10-31 | |||
| JPH08309737A | 1996-11-26 |
Attorney, Agent or Firm:
Mikio Hatta (4 outside)