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Title:
SOFT LANDING METHOD OF CLUSTER ION SPECIES
Document Type and Number:
Japanese Patent JP3803756
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a soft landing method of a cluster ion species whereby a cluster can be stably preserved at a relatively high temperature near room temperature and a cluster with a one-dimensional multilayer sandwich structure, such as V2Bz3, can be deposited without being dissociated.
SOLUTION: After a self-structured monomolecular film 13 is formed on a substrate 11, a cluster ion species 14 having been subjected to mass selection is vapor deposited on the substrate 11. The molecular chains 12 of the self-structured monomolecular film 13 absorb the kinetic energy of the cluster ion species 14 by the intramolecular vibration, intermolecular vibration, etc., in the film 13, causing the film to act as a buffer. Thus, the dissociation ratio of a cluster ion species, e.g. V1Bz2 or V2Bz3, is lowered even when the vapor deposition is conducted at a high rate, enabling the deposition in a high yield. The fixed cluster can be stably preserved at a relatively high temperature near room temperature.


Inventors:
Koji Kaya
Atsushi Nakajima
Mitsuaki Ohara
Application Number:
JP2002336830A
Publication Date:
August 02, 2006
Filing Date:
November 20, 2002
Export Citation:
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Assignee:
Japan Society for the Promotion of Science
Keio University
International Classes:
C23C14/24; (IPC1-7): C23C14/24
Domestic Patent References:
JP11274602A
JP2002069622A
Attorney, Agent or Firm:
Hiroshi Nagisawa
Ryukichi Abe
Hirukawa Masanobu
Norihiko Uchida
Hideo Sugai
Kenji Aoki
Akira Yonezawa