To further miniaturize an inter-element isolation region in not only a peripheral circuit formation region but also a pixel formation region while suppressing the noises of a solid-state image sensing device on an image signal.
On the same semiconductor substrate 10 composed of a N-type silicon substrate, the pixel formation region 4 on which a plurality of pixel cells including a photodiode 2 are two-dimensionally formed and the peripheral circuit formation region 20 are formed. The pixel formation region 4 includes the photodiode 2 and an amplifier transistor 8; and the peripheral circuit formation region 20 includes an N-type channel transistor 26. An element isolation layer 21 of the peripheral circuit formation region 20 isolates elements from each other with a STI structure. In the pixel formation region 4, an element isolation layer 12 protruded on the semiconductor substrate and an element isolation region 11 embedded in the substrate isolate elements from each other. The element isolation layer 12 is formed by selectively removing an oxide film formed on the surface of the semiconductor substrate 10.
SUZUKI YOSUKE
KOMACHI JUN
YAMAKAWA MASAYA
