PURPOSE: To prevent the light incident on an insulating film on a photodiode from being scattered to other regions adjacent to the photodiode while the light is transmitted through the insulating film and to suppress a smear and a deterioration in the sensitivity by forming a transfer electrode in a groove part which has been dug in a semiconductor substrate.

CONSTITUTION: Transfer electrodes 4-1, 4-2 are formed in a groove part which has been dug in a semiconductor substrate 1 in a solid-state image sensing device having the following: a photodiode part 8 arranged on the semiconductor substrate 1 and used to accumulate a signal charge generated by the incident light; a readout part 2 arranged to be adjacent to the photodiode part 8 and used to read out the signal charge accumulated in the photodiode part 8 after receiving the signal charge and transferring it by means of the transfer electrodes 4-1, 4-2; a picture-element separation region 3 to which the transfer electrodes 4-1, 4-2 of the readout part 2 are wired and which separates the photodiode part 8. For example, a grid-shaped groove is formed in a readout part 2 and a picture-element separation region 3 on a P-type semiconductor substrate 1 composed of silicon; transfer electrodes 4-1, 4-2 of the readout part 2 and the picture-element separation region 3 are filled completely into the groove.