Title:
SPUTTERING DEVICE AND TREATMENT OF DEPOSIT ON COLLIMATOR
Document Type and Number:
Japanese Patent JP3905584
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a means for effectively preventing a deposit on the lower face of a collimator in a sputtering device from being stripped off.
SOLUTION: This sputtering device is provided with a vacuum chamber, a pedestal 70 supporting a wafer, a target 60, means 54 and 55 for supplying a gas such as Ar, a collimator 62 arranged between the target 60 and pedestal 70 and a Ti shutter disk S capable of being arranged between the pedestal 70 and collimator 62 and maintained at a negative potential with respect to the collimator 62. Under such a constitution, when the gaseous Ar between the collimator 62 and shutter disk S is converted to plasma, a high-energy Ti particle is emitted from the shutter disk S and collided with the lower face of the collimator 62. Consequently, such a deposit as TiN film on the lower face of the collimator 62 is effectively sealed, and the deposit is not stripped off.
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Inventors:
Ariga Michio
Application Number:
JP26628696A
Publication Date:
April 18, 2007
Filing Date:
October 07, 1996
Export Citation:
Assignee:
APPLIED MATERIALS,INCORPORATED
International Classes:
C23C14/34; H01L21/203; H01L21/285; (IPC1-7): C23C14/34; H01L21/203; H01L21/285
Domestic Patent References:
| JP6081146A | ||||
| JP7335553A | ||||
| JP6065731A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
Tatsuya Shioda
Shiro Terasaki
Yuichi Yamada
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