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Title:
インメモリコンピューティングのための記憶装置
Document Type and Number:
Japanese Patent JP7480391
Kind Code:
B2
Abstract:
A memory device for CIM, applicable to a 3D AND-type flash memory, includes a memory array, input word line pairs, and a signal processing circuit. The memory array includes first and second pairs of memory cells. Each first pair of memory cells includes a first memory cell set coupled to a first GBL and a second memory cell set coupled to a second GBL. Each second pair of memory cells includes a third memory cell set coupled to the first GBL and a fourth memory cell set coupled to the second GBL. Each input word line pair includes a first input word line coupled to the first and the second memory cell sets, and a second input word line coupled to the third and the fourth memory cell sets s. The signal processing circuit is coupled to the first and second global bit lines.

Inventors:
Lu Hakoba
Xu Koken
Leaf riser
Xie Zhichang
Toshio Hong
Yongjun Lee
Application Number:
JP2023071918A
Publication Date:
May 09, 2024
Filing Date:
April 26, 2023
Export Citation:
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Assignee:
Wanghong Electronics Co., Ltd.
International Classes:
G11C7/18; G06F12/00; G06G7/16; G11C16/04; G11C16/28
Domestic Patent References:
JP2023515679A
JP346195A
JP200157096A
Foreign References:
WO2021178003A1
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Masaaki Ishikawa