PURPOSE: To obtain a resistor layer whose resistivity is high and whose bonding strength with reference to an insulating base material is high by forming the resistor layer of a mixture composed of a resistor metal and an oxide.

CONSTITUTION: Cr and SiO2 are evaporated simultaneously onto one face of a high-conductivity material thin film 13 such as an electrolytic copper foil or the like by a sputtering method; a mixture resistor layer 12 is formed. This thin film and a prepreg of an insulating base material 11 are laminated, heated and pressed; a substrate 10, for printed-circuit board use, provided with the resistor layer is obtained. The bonding strength with reference to the resistor layer 12 is strong. In addition, when a ratio of an oxide is changed, the resistivity of the resistor layer 12 can be changed. When only Cr is evaporated under an appropriate partial pressure of oxygen, it is possible to form a mixture resistor layer of Cr and CrO.