基板処理装置、半導体装置の製造方法および基板処理方法

Japanese Patent JP7121786

B2

To provide a substrate processing apparatus that implements high throughput substrate processing in substrate processing using plasma.SOLUTION: A plasma processing unit 410 includes a reaction container 431, a coil 432 provided on the outer periphery of a side wall of the reaction container, a gas introducing port 433 provided on a container upper end surface inside the reaction container, a gas flow path forming portion which is provided inside the reaction container and between the gas introducing port and the upper end of the coil 432, and has a facing surface facing the container upper end surface, and a first gap formed between the outer edge of the upper end of the gas flow path forming portion and the inner peripheral surface of the reaction container, a second gap formed between the outer edge of the lower end of the gas flow path forming portion and the inner peripheral surface of the reaction container, and a substrate processing chamber 445 provided in a direction to the lower end of the reaction container. In the gas flow path forming portion, after gas supplied from the gas introducing port flows between the container upper end surface and the facing surface, the gas passes through the first gap and the second gap, and flows approximately vertically along the inner peripheral surface of the reaction container below the gas flow path forming portion.SELECTED DRAWING: Figure 3

Hidehiro Nouchi
Makoto Hiyama
Toru Kakuda
Toshiya Shimada
Amano Fudai

JP2020179500A

August 18, 2022

October 27, 2020

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KOKUSAI ELECTRIC Inc.

H01L21/3065; H05H1/46

JP2009094115A
JP58170536A
JP2005203209A
JP2007501535A
JP2003249493A
JP2009026885A

Patent Service Corporation Taiyo International Patent Office
Patent Business Corporation IP Win

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