Title:
高周波用途のための基板及び関連付けられた製造方法
Document Type and Number:
Japanese Patent JP7293537
Kind Code:
B2
Abstract:
A substrate for radiofrequency microelectronic devices comprises a carrier substrate made of a semi-conductor, a sintered composite layer disposed on the carrier substrate and formed from powders of at least a first dielectric material and a second dielectric different from the first material, the sintered composite layer having a thickness larger than 5 microns and a thermal expansion coefficient that is matched with that of the carrier substrate to plus or minus 30%.
Inventors:
Alibert, Frederick
Vity Elephant, Christel
Radisson, Damian
Vity Elephant, Christel
Radisson, Damian
Application Number:
JP2020543844A
Publication Date:
June 20, 2023
Filing Date:
March 13, 2019
Export Citation:
Assignee:
Soitec
International Classes:
H01L21/02; H01L27/12
Domestic Patent References:
| JP2017504210A | ||||
| JP2016072450A | ||||
| JP9027604A |
Attorney, Agent or Firm:
Ikeda Adult
Junichiro Sakamaki
Masakazu Noda
Junichiro Sakamaki
Masakazu Noda
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