Title:
SUPERCONDUCTOR TRANSISTOR
Document Type and Number:
Japanese Patent JPH02192777
Kind Code:
A
Abstract:
PURPOSE:To improve operation characteristics by arranging an insulator between a base region and a collector region, making tunnel current flow in an insulating layer, and eliminating a Schottky junction. CONSTITUTION:An insulator 4 is arranged between an emitter region 1 and a collector region 2 composed of superconductor. A collector region 3 composed of degenerated semiconductor of P-type or N-type is arranged, and an insulating layer 5 is interposed between the base region 2 and the collector region 3. The insulating layer is made so thin that tunnel current flows between the regions 2, 3. Since the superconductor 2 and the insulator 4 form a ohmic contact, a Schottky barrier is not generated. As a result, quasi-particle in the base region is injected into the collector region 3 without hindrance, via the insulating layer 5. By eliminating the Schottky junction in this manner, superconducting transistor excellent in operation characteristics can be obtained.
Inventors:
SUZUKI HIROSHI
NAKATANI YOSHIAKI
USUKI TATSURO
YOSHISATO MASANOBU
NAKATANI YOSHIAKI
USUKI TATSURO
YOSHISATO MASANOBU
Application Number:
JP1268789A
Publication Date:
July 30, 1990
Filing Date:
January 20, 1989
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L29/68; H01L39/22; (IPC1-7): H01L29/68; H01L39/22
Domestic Patent References:
| JPS63305573A | 1988-12-13 | |||
| JPS6332974A | 1988-02-12 | |||
| JPS639149A | 1988-01-14 |
Attorney, Agent or Firm:
Nobuo Kono
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