Title:
SUPERCONDUCTING TRANSISTOR
Document Type and Number:
Japanese Patent JPH02192776
Kind Code:
A
Abstract:
PURPOSE:To increase amplification factor by constituting a superconductor region between a collector region composed of semiconductor and an emitter region composed of superconductor, as a base region. CONSTITUTION:A single crystal film 2 is formed on an MgO substrate 1 by epitaxial growth, and acts as a base region. The upper surface of a superconductor film 4 is exposed via an insulating film 3, buried in the crystal film 2, and acts as an emitter region. A semiconductor film 6 is formed in the crystal film 2 so as to be separated from the superconductor film 4, to be arranged parallel to the emitter region, and to expose only the upper surface via an insulating layer 5. Said semiconductor film 6 acts as a collector region. Hence, the flow path of particle in the base region interposed between regions 4, 6 has a direction coincident with that of the superconductor 4, so that the mobility of particle between the regions 4, 6 is increased.
Inventors:
SUZUKI HIROSHI
NAKATANI YOSHIAKI
USUKI TATSURO
YOSHISATO MASANOBU
NAKATANI YOSHIAKI
USUKI TATSURO
YOSHISATO MASANOBU
Application Number:
JP1268689A
Publication Date:
July 30, 1990
Filing Date:
January 20, 1989
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L29/68; H01L39/22; (IPC1-7): H01L29/68; H01L39/22
Attorney, Agent or Firm:
Nobuo Kono
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