Title:
JOSEPHSON JUNCTION ELEMENT AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH02192775
Kind Code:
A
Abstract:
PURPOSE:To obtain a barrier film of uniform thickness which does not damage the electrode interface of high temperature superconductor by using a thin film having CF2 radical and CF3 radical as a barrier film of a Josephson junction element. CONSTITUTION:On a substrate 7 of SiTiO3 and the like, the title Josephson junction element is provided with the following; the lower electrode 8 of a superconducting thin film, a barrier film 9 thereon, and the upper electrode 10 of the superconducting thin film. The barrier film 9 closely interposed between the upper and the lower electrodes 10, 8 has a bonding of at least two elements, i.e., carbon and fluorine, and is a thin film of composition wherein the above elements exist as CF2 radical and CF3 radical. The barrier film 9 is formed as a plasma polymerized film, which is as thin as 1-3nm or less and excellent in uniformity. Further, the film 9 can be easily formed by plasma treatment of CHF3 gas and the like without causing a damage of diffusion and the like to the electrode of the high temperature superconductor, and a thin film can be uniformly formed by very easy adjustment of film thickness.
Inventors:
MOROHASHI SHINICHI
Application Number:
JP1241889A
Publication Date:
July 30, 1990
Filing Date:
January 20, 1989
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L39/22; H01L39/24; (IPC1-7): H01L39/22; H01L39/24
Attorney, Agent or Firm:
Teiichi Ijiba (2 outside)
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