SURFACE-EMITTING SEMICONDUCTOR LASER AND OPTICAL TRANSMITTER MODULE AND SYSTEM USING THE SAME

Japanese Patent JP3780665

B2

PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser, the manufacturing yield of which can be improved by stopping etching with good accuracy immediately above a current constricting layer, even when AlAs, etc., is used as a low-index semiconductor layer of an upper reflecting mirror, when the current constricting layer is formed by selectively oxidizing an AlAs layer or AlGaAs layer having a fine Ga composition and which oscillates at a low threshold current and an optical transmitter module and system using the semiconductor laser.
SOLUTION: A multilayered semiconductor film which contains a phosphorus- based compound semiconductor material or the material in at least one layer as an etching stopping layer 12 is introduced between an upper reflecting mirror 10 and a current constricting layer 7. Consequently, selective etching can be made in an element manufacturing process, and at the same time, a surface- emitting semiconductor laser which oscillates at a low threshold current can be obtained with high yield, by suppressing the deterioration of the reflectivity of the mirror 10. In addition, an optical transmitter module and system which do not consume much electric power can be obtained.

Chatan Ken
Masahiko Kondo
Koji Nakahara
Mike Larsson

JP30516697A

May 31, 2006

November 07, 1997

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株式会社日立製作所

G02B6/42; H01S5/183; B82Y20/00; H01S5/00; H04B10/40; H04B10/50; H04B10/572; H04B10/60; (IPC1-7): H01S3/18; G02B6/42; H04B10/28; H04B10/26; H04B10/14; H04B10/04; H04B10/06

JP9246652A
JP9205250A
JP10505465A
JP9237942A
JP8195522A
JP9283843A
JP10107389A
JP10068223A

US5343487
US5293392

Masayuki Watanabe
Masatoshi Isomura

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