PURPOSE: To restrain carriers from being recombined on the surface of a semiconductor.
CONSTITUTION: A silicon oxide film which contains nitrogen at an atomic ratio of 5% or higher is applied onto a substrate by a photo-assisted CVD method which uses a low-pressure mercury lamp as a light source. A potential with respect to electrons is lowered on the surface of a semiconductor by a stable positive fixed electric charge formed in a dielectric film; a trap level at the interface between the semiconductor and the dielectric film is occupied by the electrons. On the other hand, the concentration of holes near the interface is lowered. As a result, the recombination speed of carriers is reduced, and an effective surface passivation can be realized.
UEMATSU TSUYOSHI
KANDA KAZUYOSHI
