SUSCEPTOR FOR SEMICONDUCTOR PROCESS AND ITS MANUFACTURE

Title:

SUSCEPTOR FOR SEMICONDUCTOR PROCESS AND ITS MANUFACTURE

Document Type and Number:

Japanese Patent JPH07153821

Kind Code:

A

Abstract:

PURPOSE: To improve precision and surface flatness, and increase the chucking force of a silicon wafer, by a method wherein, after a flat substrate is thickly coated with an aluminum nitride film, a trench is formed by working the aluminum nitride film itself.

CONSTITUTION: The substrate 2 surface on which an aluminum nitride film is formed is previously flattened by polishing, grinding and chemical treatment, and an aluminum film 3 is formed. Specified trenches 4 are formed by grinding the aluminum nitride film 3. Since the trenches 4 are formed in the aluminum nitride film 3 itself, the working precision of the trench is high, and the surface flatness is excellent. Thereby the chucking force of a silicon wafer is large, and high quality can be realized at a low cost. Further, since the surface which mounts a wafer and is exposed in a semiconductor manufacturing equipment is constituted of the aluminum nitride film 3, plasma resistance is obtained and the life of a susceptor is improved.

Inventors:

MIKAMI KAZUHIKO
AIDA HIROSHI
KITAZAWA KENJI

Application Number:

JP29936993A

Publication Date:

June 16, 1995

Filing Date:

November 30, 1993

Export Citation:

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Assignee:

KYOCERA CORP

International Classes:

H01L21/302; H01L21/205; H01L21/3065; H01L21/68; H01L21/683; (IPC1-7): H01L21/68; H01L21/205; H01L21/3065

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