To provide a switched connection film which can generate a large switched anisotropic magnetic field, when antiferromagnetic material containing an element X (X is platinum group element) and Mn is used as an antiferromagnetic layer, and a magneto-resistance effect element using the switched connection film.
On the upper side of a base layer 6 formed of Ta, a fixed magnetic layer 3 is formed, and thereon an antiferromagnetic layer 4 is formed being in contact with the layer 3. As a result, the [111] face of the fixed magnetic layer 3 is priority oriented to the film surface. As compared with the [111] face of the fixed magnetic layer 3, the degree of orientation of the [111] face of the antiferromagnetic layer 4 is small, or orientation is not generated.
SAITO MASAJI
OMINATO KAZUYA
YAMAMOTO YUTAKA
MAKINO TERUHIRO
