To provide a thermopile infrared sensor capable of detecting a defect in a wafered condition such as short-circuiting of a wiring to prevent delivery to a subsequent process, and a method of inspecting with the sensor.
Polysilicon films 13 and aluminum thin films 14 are alternately laid extendedly in series on a silicon substrate 10, and an electromotive force generated by a temperature difference between a warm junction 17 and a cold junction 18 is taken out from both terminals 20, 21 of a series circuit series- connected with a thermocouple. A resistance value of the thermocouple divided by electrical inspection terminals 22, 23, 24 led out from portions α1, α2, α3 in a circuit midway of the series circuit series-connected with the thermocouple is measured in the wafered condition, using the terminals 22, 23, 24 and the both terminals 20, 21 of the series circuit, and quality is determined based on a measured result of the resistance value.
TOYODA INEO
JPH06137943A | 1994-05-20 | |||
JPH10107109A | 1998-04-24 |
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