To stabilize a film deposition rate and to facilitate maintenance by providing raw material heating sections inside a chamber in a thin film deposition system.

The thin film deposition system 1 is provided with: a chamber 11 which is made to keep airtight; a holder 12 holding a substrate 51 provided inside the chamber 11; raw material heating sections 36 and 37 provided inside the chamber 11 and vaporizing or subliming a film deposition raw material; a carrier gas feeding section 31 connected to the raw material heating sections 36 and 37 and carrying the film deposition raw material made into a vapor phase state in the raw material heating sections 36 and 37 to the direction of the substrate 51; piping 40 and 41 feeding the film deposition raw material made into a vapor phase state in the raw material heating sections 36 and 37 to the direction of the substrate 51 by carrier gas; and an exhausting section 13 provided on the chamber 11 and exhausting useless gas in the chamber.