PURPOSE: To improve luminance and dielectric characteristic by containing an oxide tantalum film in at least one of first and second insulating layers nipping a light emitting layer.
CONSTITUTION: On a base glass 1, a metal Ta film is sputtered and evaporated as the material of a first electrode 2, and worked into a determined stripe pattern by photolithography. Then, the surface of the electrode 2 is oxidized by anode oxidation to form a Ta2O5 film 3a forming a part of a first insulating layer 3. The thickness of the Ta2O5 film can be precisely controlled by the voltage to be applied to the anode. A SiO2 film 3b and a Si3N4 film 3a are successively accumulated by sputtering, and the formation of the insulating layer 3 is completed. A light emitting layer 4 is then formed by electron beam evaporation, and a Si3N4 film 5a and an Al2O3 film 5b are accumulated by spattering to form a second insulating layer 5. Finally, an ITO film is sputtered and evaporated, and a stripe second electrode 6 crossing at a right-angled to the electrode 2 is formed by photolithography.
YAMASHITA TAKURO
OGURA TAKASHI
YOSHIDA MASARU
NAKAJIMA SHIGEO
