Title:
THIN FILM SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP3393449
Kind Code:
B2
Abstract:
PURPOSE: To perform effective hydrogenation by providing a rough surface whose area is increased in an interlayer insulating film, facilitating adsorption of moisture, and providing an efficient hydrogen diffusion source for an element region.
CONSTITUTION: After a hydrogen diffusion shielding film 8 is formed on an interlayer insulting film 6, moisture absorbed by an hygroscopic interlayer insulating film 4 is decomposed to generate hydrogen, which is introduced to a semiconductor thin film forming an element region. In this case, in order to enhance the hydrogenating efficiency of a thin film transistor 3, it is necessary to ensure an enough hydrogen amount. That is, it is important to include much moisture to become a generation source of hydrogen in the film 6. Accordingly, the surface of the film 6 formed on the transistor 3 is treated by etching, etc., to increase its surface area. Thus, its moisture absorption rate is raised, hydrogen content necessary for hydrogenating can be sufficiently obtained.
More Like This:
Inventors:
Takeshi Urazono Exhibition
Masumitsu Ino
Kikuo Kaise
Toshihiko Iwanaga
Masumitsu Ino
Kikuo Kaise
Toshihiko Iwanaga
Application Number:
JP25262493A
Publication Date:
April 07, 2003
Filing Date:
September 14, 1993
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L29/78; H01L21/316; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/316
Domestic Patent References:
| JP5218423A |
Attorney, Agent or Firm:
Harutoshi Suzuki
Previous Patent: METHOD FOR FORMING RING GEAR OF METAL PLATE
Next Patent: MAX CIRCUIT AND MIN CIRCUIT
Next Patent: MAX CIRCUIT AND MIN CIRCUIT