Title:
酸化物半導体層を含む薄膜トランジスタ
Document Type and Number:
Japanese Patent JP7063712
Kind Code:
B2
Abstract:
A thin film transistor includes at least a gate electrode, a gate insulating film, an oxide semiconductor layer, source/drain electrodes, and at least one layer of a passivation film on a substrate. Metal elements constituting the oxide semiconductor layer include In, Ga, Zn, and Sn. Respective ratios of the metal elements to a total (In+Ga+Zn+Sn) of the metal elements in the oxide semiconductor layer satisfy: In: 30 atom % or more and 45 atom % or less, Ga: 5 atom % or more and less than 20 atom %, Zn: 30 atom % or more and 60 atom % or less, and Sn: 4.0 atom % or more and less than 9.0 atom %.
Inventors:
Mototaka Ochi
Hiroshi Goto
Hiroshi Goto
Application Number:
JP2018090642A
Publication Date:
May 09, 2022
Filing Date:
May 09, 2018
Export Citation:
Assignee:
KABUSHIKI KAISHA KOBE SEIKO SHO
International Classes:
H01L29/786; C23C14/08; H01L21/336; H01L21/363
Domestic Patent References:
| JP2007281409A | ||||
| JP2012124446A | ||||
| JP2013105814A | ||||
| JP2017157813A | ||||
| JP2013229495A | ||||
| JP2015179828A | ||||
| JP2019009435A |
Foreign References:
| WO2015198604A1 | ||||
| WO2007139009A1 |
Other References:
OCHI Mototaka et al.,Evaluation of stress stabilities in amorphous In-Ga-Zn-O thin-film transistors: Effect of passivation with Si-based resin,Japanese Journal of Applied Physics,Vol. 57,日本,The Japan Society of Applied Physics,2017年12月19日,p.02CB06-1~p.02CB06-7,DOI:10.7567/JJAP.57.02CB06
Attorney, Agent or Firm:
Patent business corporation glory patent office
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