Title:
THIN FILM TRANSISTOR AND ITS MANUFACTURE, AND THIN FILM TRANSISTOR PANEL AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JPH01219722
Kind Code:
A
Abstract:
PURPOSE:To facilitate the manufacturing process by forming all of a gate electrode, a gate insulating film, and a semiconductor transistor (TR) element area in the same outward shape while neither the source electrode nor the drain electrode projects from the peripheral edge of a semiconductor film. CONSTITUTION:A lower conductive thin film 14 as the gate electrode 14G, the gate insulating film 15, the semiconductor film 16, a contact film 17, and an upper conductive thin film 18 which forms a source electrode 18S and the drain electrode 18D are laminated in order over the entire surface of a substrate 11. Then the transistor element area and a resist film 19 in pattern corresponding to the shapes of a gate lead 14Ga, a source lead 18Sa, and a lead 18D are formed on the upper conductive thin film 18, and the respective films 18, 17, 16, 15, and 14 are patterned in the same shape. Then, the parts of the film 18 corresponding to a channel part C and a lead 14Ga and the film 17 at the parts are removed to separate the film 18S and electrode 18D, completing the thin film TR 13. Thus, the manufacture process is simplified.
Inventors:
YAMAMURA NOBUYUKI
Application Number:
JP4427788A
Publication Date:
September 01, 1989
Filing Date:
February 29, 1988
Export Citation:
Assignee:
CASIO COMPUTER CO LTD
International Classes:
H01L27/12; G02F1/133; G02F1/136; G02F1/1368; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): G02F1/133; H01L27/12; H01L29/78
Attorney, Agent or Firm:
Takehiko Suzue (2 outside)