PURPOSE: To assure the degree of freedom in the positions where contact holes are set by depositing a vapor phase row insulating film having apertures on the metallic film on a substrate and denaturing the surface part of the metallic film in the apertures of this vapor phase grown insulating film, thereby forming an anodically oxidized film.

CONSTITUTION: The anodically oxidizable metallic film 1 consisting of an alloy containing tantalum is formed on a transparent glass substrate 5. The insulating film 2 consisting of SiOx is then grown in a vapor phase by a prescribed film thickness. Next, only the regions requiring anodic oxidation are provided with the apertures of a photoresist 3 and, thereafter, the vapor phase grown insulating film of the regions requiring the anodic oxidation is removed, by which the apertures 2A of the vapor phase grown insulating film 2 are formed. The substrate 5 deposited with the metallic film 1, the insulating film 2 and the photoresist 3 is immersed into an electrolyte suitable for the metallic film 1. A current is then passed to the metallic film 1 as anode and platinum, etc., as cathode. The anodically oxidized film 4 is formed only on the metallic film 1 exposed in the apertures 2A and the degree of freedom in the positions where the contact holes are set is assured when this structural body is used for a liquid crystal display device.