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Title:
THIN-FILM TRANSISTOR AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2005183509
Kind Code:
A
Abstract:

To provide a thin-film transistor which can obtain a relatively large on-state current even if it is formed on an insulation substrate having a low thermal resistance.

In manufacturing the thin-film transistor on the insulation substrate via a protective insulation film, at least one of two dopant diffusion layers which constitute the thin-film transistor is made to include at least two regions having different crystallinities. Of the two regions, the one having a higher electric resistance is distributed in a surface layer on the channel region side.


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Inventors:
HIRANO NAOTO
TANABE HIROSHI
Application Number:
JP2003419106A
Publication Date:
July 07, 2005
Filing Date:
December 17, 2003
Export Citation:
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Assignee:
NEC CORP
International Classes:
H01L21/20; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/20; H01L21/336
Domestic Patent References:
JPH08316486A1996-11-29
JPH08274341A1996-10-18
JPH05283694A1993-10-29
Attorney, Agent or Firm:
Shunichi Yoshimura



 
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