Title:
THIN FILM TRANSISTOR AND LIQUID CRYSTAL DISPLAY
Document Type and Number:
Japanese Patent JP3403807
Kind Code:
B2
Abstract:
PURPOSE: To provide a thin film transistor, which can inhibit the effect of an edge conduction, and moreover, to provide a high-performance liquid crystal display using the thin film transistor, which can inhibit this effect of the edge conduction.
CONSTITUTION: A semiconductor thin film 12 is formed of a polycrystalline silicon thin film polycrystallized by the emission of an Xe-Cl excimer laser beam and an overlapped part of the thin film 12 with a gate electrode 14 is constituted as a channel part 12b. By forming notches 14b in the electrode 14, the channel part 12b is formed in such a form that a channel length Le in the vicinity of a pattern edge 12a is longer than a channel length L in the part on the side more inner than the edge 12a.
Inventors:
Tetsuya Kawamura
Yutaka Miyata
Yutaka Miyata
Application Number:
JP12139294A
Publication Date:
May 06, 2003
Filing Date:
June 02, 1994
Export Citation:
Assignee:
Matsushita Electric Industrial Co., Ltd
International Classes:
G02F1/136; G02F1/1368; H01L29/78; H01L29/786; (IPC1-7): H01L29/786; G02F1/1368
Domestic Patent References:
| JP63173369A | ||||
| JP6260643A |
Other References:
【文献】国際公開93/008603(WO,A1)
Attorney, Agent or Firm:
Mitsutake Murayama