Title:
FABRICATION OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH07122567
Kind Code:
A
Abstract:
PURPOSE: To enhance the reliability of a semiconductor device by preventing generation of void in the interlayer film between Al alloy wirings.
CONSTITUTION: A Ti film 103, a TiN film 104, an Al-Si-Cu film 105, a TiN film 106, and a photoresist 107 are deposited sequentially on a silicon substrate 101. The TiN film 106 is then subjected to side etching using a dry etching system followed by etching of the Af-Si-Cu film 105. Since the width of the TiN film 106 is substantially equalized to that of the Al-Si-Cu film 105, an interlayer film can be interposed between wirings 105, 106 with no gap. This method prevents generation of void in the interlayer film.
Inventors:
SHOJI HIDEYUKI
Application Number:
JP28564393A
Publication Date:
May 12, 1995
Filing Date:
October 21, 1993
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L21/302; H01L21/3065; H01L21/3213; (IPC1-7): H01L21/3213; H01L21/3065
Attorney, Agent or Firm:
Seiichi Kuwai