Title:
MELTING CRUCIBLE DEVICE FOR PULLING UP SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JPS5930794
Kind Code:
A
Abstract:
PURPOSE:To prevent the inside of the graphite crucible of the titled melting crucible device from being silicified, being oxidized or sticking to the quartz crucible fixed in the graphite crucible by interposing a separating layer between the crucibles. CONSTITUTION:A separating layer 4 of 5mm. thickness made of powdered silicon carbide is interposed between a graphite crucible 1 and a quartz glass crucible 2 fixed in the crucible 1. Polycrystalline Si is filled into the crucible 2 and melted at 1,450 deg.C, and a single crystal is pulled up from the melt with a seed crystal and cooled. Even after repeating the operations twice, the crucible 2 undergoes no deformation and no reaction. It is preferable that said silicon carbide powder is as pure as possible so as to prevent from unfavorable influence on an Si single crystal. The preferred thickness of the layer 4 is 3-10mm.. In the figure, a symbol 5 is a ringlike plate.
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Inventors:
YAMAZAKI HIROSHI
HOSHINA KATSUMI
ABE SHIGERU
HOSHINA KATSUMI
ABE SHIGERU
Application Number:
JP13834482A
Publication Date:
February 18, 1984
Filing Date:
August 09, 1982
Export Citation:
Assignee:
TOSHIBA CERAMICS CO
International Classes:
C03B20/00; C30B15/10; C30B29/06; C30B29/44; H01L21/208; (IPC1-7): C30B29/06; H01L21/02
Domestic Patent References:
| JPS57111296A | 1982-07-10 | |||
| JPS5387983A | 1978-08-02 |
Attorney, Agent or Firm:
Yujiro Taka