Title:
PLASMA TREATMENT APPARATUS
Document Type and Number:
Japanese Patent JPH0774116
Kind Code:
A
Abstract:
PURPOSE: To improve the utilization efficiency of a generated plasma significantly and improve the quality of a processed film and, further, increase the processing speed.
CONSTITUTION: The magnetic flux density on the microwave introducing side of a discharge tube 2 is larger than the magnetic flux density at the resonance generating position of the electron resonance caused by a magnetic field and a microwave 4. The flux density of the magnetic field is so distributed as to have a distribution having the resonance generating position of the electron cyclotron resonance on one of its curved surfaces and, further, the resonance generating position of the electron cyclotron resonance is positioned in a sample chamber 9 at least partially.
Inventors:
SUZUKI KAZUO
SUZUKI NOBORU
SONOBE TADASHI
CHIBA ATSUSHI
MONMA NAOHIRO
MOCHIZUKI YASUHIRO
TAKAHASHI SHIGERU
FUKUDA TAKUYA
SUZUKI NOBORU
SONOBE TADASHI
CHIBA ATSUSHI
MONMA NAOHIRO
MOCHIZUKI YASUHIRO
TAKAHASHI SHIGERU
FUKUDA TAKUYA
Application Number:
JP16355194A
Publication Date:
March 17, 1995
Filing Date:
July 15, 1994
Export Citation:
Assignee:
HITACHI LTD
HITACHI ENG SERVICE
HITACHI ENG SERVICE
International Classes:
C23C16/50; C23C16/511; C23F4/00; H01L21/203; H01L21/205; H01L21/302; H01L21/3065; H01L21/31; (IPC1-7): H01L21/205; C23C16/50; C23F4/00; H01L21/203; H01L21/3065; H01L21/31
Domestic Patent References:
| JPS60134423A | 1985-07-17 | |||
| JPS61125133A | 1986-06-12 | |||
| JPS5779621A | 1982-05-18 |
Attorney, Agent or Firm:
Ogawa Katsuo
Next Patent: ヒータの温度パターン作成方法及びこの温度パターンを用いたＳｉ単結晶...