PURPOSE: To provide a gettering method capable of removing contamination matter suffuciently even in a low temperature heat treatment.

CONSTITUTION: This embodiment comprises a step where silicon ions are implanted into a silicon substrate under conditions of an acceleration voltage of 10keV or less and a dose amount of 1×1014cm-2 to 1×1015cm-2, a step where, before or after this implanting step of silicon ions, in a region of depth less than 100nm from the surface of the silicon substrate, an impurity region made of a III group element or a V group element having impurity density of 1×1018cm-3 or more is formed, and a step where a heat treatment of 700°C or more of the silicon substrate is performed.